DIM800DDS12-A000_15 datasheet(3/8 Pages) DYNEX

3 / 8 page

DIM800DDS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

3/8

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ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

ICES

Collector cut-off current

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125°C

IGES

Gate leakage current

VGE = ± 20V, VCE = 0V

μA

VGE(TH)

Gate threshold voltage

IC = 40mA, VGE = VCE

4.5

5.5

6.5

VCE(sat)

Collector-emitter

saturation voltage

VGE = 15V, IC = 800A

2.2

2.8

VGE = 15V, IC = 800A, Tj = 125°C

2.6

3.2

Diode forward current

800

IFM

Diode maximum forward current

tp = 1ms

1600

Diode forward voltage

IF = 800A

2.1

2.4

IF = 800A, Tj = 125°C

2.1

2.4

Cies

Input capacitance

VCE = 25V, VGE = 0V, f = 1MHz

Gate charge

±15V

μC

Cres

Reverse transfer capacitance

VCE = 25V, VGE = 0V, f = 1MHz

Module inductance

– per switch

RINT

Internal transistor resistance

–

per switch

270



SCData

Short circuit current, ISC

Tj = 125°C, VCC = 900V

tp ≤ 10μs, VGE ≤ 15V

VCE (max) = VCES – L

* x dI/dt

IEC 60747-9

4500

Note:

* L is the circuit inductance + L

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