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DIM800DDS12-A000 데이터시트(PDF) 4 Page - Dynex Semiconductor

부품명 DIM800DDS12-A000
상세설명  Dual Switch IGBT Module
PDF  8 Pages
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제조업체  DYNEX [Dynex Semiconductor]
홈페이지  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM800DDS12-A000 데이터시트(HTML) 4 Page - Dynex Semiconductor

  DIM800DDS12-A000_15 Datasheet HTML 1Page - Dynex Semiconductor DIM800DDS12-A000_15 Datasheet HTML 2Page - Dynex Semiconductor DIM800DDS12-A000_15 Datasheet HTML 3Page - Dynex Semiconductor DIM800DDS12-A000_15 Datasheet HTML 4Page - Dynex Semiconductor DIM800DDS12-A000_15 Datasheet HTML 5Page - Dynex Semiconductor DIM800DDS12-A000_15 Datasheet HTML 6Page - Dynex Semiconductor DIM800DDS12-A000_15 Datasheet HTML 7Page - Dynex Semiconductor DIM800DDS12-A000_15 Datasheet HTML 8Page - Dynex Semiconductor  
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DIM800DDS12-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 800A
VGE = ±15V
VCE = 600V
RG(ON) = 2.7
RG(OFF) = 2.7
LS ~ 100nH
1250
ns
tf
Fall time
170
ns
EOFF
Turn-off energy loss
130
mJ
td(on)
Turn-on delay time
250
ns
tr
Rise time
250
ns
EON
Turn-on energy loss
80
mJ
Qrr
Diode reverse recovery charge
IF = 800A
VCE = 600V
dIF/dt = 4200A/μs
80
μC
Irr
Diode reverse recovery current
380
A
Erec
Diode reverse recovery energy
30
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 800A
VGE = ±15V
VCE = 600V
RG(ON) = 2.7
RG(OFF) = 2.7
LS ~ 100nH
1500
ns
tf
Fall time
200
ns
EOFF
Turn-off energy loss
160
mJ
td(on)
Turn-on delay time
400
ns
tr
Rise time
220
ns
EON
Turn-on energy loss
120
mJ
Qrr
Diode reverse recovery charge
IF = 800A
VCE = 600V
dIF/dt = 4000A/μs
160
μC
Irr
Diode reverse recovery current
450
A
Erec
Diode reverse recovery energy
60
mJ



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