UPD70F3003A datasheet(35/44 Pages) NEC

35 / 44 page

µPD70F3003A, 70F3025A

Data Sheet U13189EJ3V0DS00

3.2 Flash Memory Programming Mode

Basic Characteristics (TA = 10 to 40

°C (when rewrifing), TA = –40 to +85°C (when not rewriting))

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Operating frequency

MHz

Supply voltage

VDD

4.5

5.5

VPPL

VPP low level detection

–0.5

0.2 VDD

VPPM

VPP, VDD level detection

0.8 VDD

1.2 VDD

VPPH

VPP high voltage detection

9.7

10.3

10.6

VDD supply current

IDO

3.0

φ + 25

VPP supply current

IPP

VPP = 10.3 V

200

Number of rewriteNote

CWRT

times

Note

Operation is not guaranteed when rewrite is performed more than 20 times.

Cautions 1. VPP pull-down resistance value (RVPP) is recommended to be in the range 5 k

Ω to 15 kΩ.

2. Set the transfer rate between programmer and device as follows.

CSI0

: 0.2 to 1 MHz

UART0: 4800 to 76800 bps

Remark

φ: Internal system clock frequency

UPD70F3003A 데이터시트(PDF) 35 Page - NEC

UPD70F3003A 데이터시트(HTML) 35 Page - NEC

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44

데이터시트 다운로드

링크 URL