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UM1653 데이터시트(PDF) 30 Page - STMicroelectronics |
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UM1653 데이터시트(HTML) 30 Page - STMicroelectronics |
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30 / 45 page ![]() NAND driver firmware modules UM1653 30/45 DocID025024 Rev 1 Table 44. FSMC_NAND_WriteSpareArea Function name FSMC_NAND_WriteSpareArea. Prototype uint32_t FSMC_NAND_WriteSpareArea(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumSpareAreaTowrite) Behavior description Writes spare area information for specified page addresses. Input parameter pBuffer: pointer on the Buffer containing data to be written. Address: First page address. NumSpareAreaTowrite: Number of Spare Area to write. Output parameter New status of the NAND operation. This parameter can be: – NAND_TIMEOUT_ERROR: when the previous operation generate a Timeout error. – NAND_READY: when memory is ready for the next operation New status of the increment address operation. It can be: – NAND_VALID_ADDRESS: When the new address is valid. – NAND_INVALID_ADDRESS: When the new address is invalid. Table 45. FSMC_NAND_ReadSpareArea Function name FSMC_NAND_ReadSpareArea. Prototype uint32_t FSMC_NAND_ReadSpareArea(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumSpareAreaToRead) Behavior description Reads the spare area information from the specified page addresses. Input parameter pBuffer: pointer on the Buffer to fill. Address: First page address. NumSpareAreaToRead: Number of Spare Area to read. Output parameter New status of the NAND operation. This parameter can be: – NAND_TIMEOUT_ERROR: when the previous operation generated a Timeout error. – NAND_READY: when memory is ready for the next operation New status of the increment address operation. It can be: – NAND_VALID_ADDRESS: When the new address is valid. – NAND_INVALID_ADDRESS: When the new address is invalid. Table 46. FSMC_NAND_EraseBlock Function name FSMC_NAND_EraseBlock. Prototype uint32_t FSMC_NAND_EraseBlock(NAND_ADDRESS Address) Behavior description Erases complete block from NAND FLASH. Input parameter Address: Any address into block to be erased. Output parameter New status of the NAND operation. This parameter can be: – NAND_TIMEOUT_ERROR: when the previous operation generate a Timeout error. – NAND_READY: when memory is ready for the next operation. |
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