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SP2102 데이터시트(PDF) 1 Page - SamHop Microelectronics Corp. |
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SP2102 데이터시트(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() Suface Mount Package. S mHop Microelectronics C orp. a SP2102 Symbol VDS VGS IDM 85 W A PD °C 16 -55 to 150 ID Units Parameter 100 2.0 13 °C/W V V ±20 TA=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 100V 2.0A 216 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Ambient R JA Ver 1.0 www.samhop.com.tw Jan,03,2014 1 Details are subject to change without notice. TA=25°C TA=70°C A TA=70°C W Dual N-Channel Enhancement Mode Field Effect Transistor Green Product 1.6 0.94 S 1 G1 S 2 G2 D1 D1 D2 D2 EAS Single Pulse Avalanche Energy d mJ 1.47 DFN 3x3 PIN1 e |
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