UPD78P014 datasheet(20/62 Pages) NEC

20 / 62 page

µPD78P014

4.2

PROM Write Procedure

The PROM write procedure is as shown below, allowing high-speed writing.

(1)

Fix the RESET pin low. Supply +5 V to the VPP pin. Unused pins are handled as shown in “PIN CONFIGURATION

(2) PROM programming mode”.

(2)

Supply +6 V to the VDD pin and +12.5 V to the VPP pin.

(3)

Supply the initial address.

(4)

Supply the write data.

(5)

Supply a 1 ms program pulse (active low) to the CE pin.

(6)

Verify mode. If written, go to (8); if not written, repeat (4) through (6). When the write operation has been

repeated 25 times, go to (7).

(7)

Halt write operation due to defective device.

(8)

Supply write data and supply (times repeated in (4) through (6))

× 3 ms program pulse (additional write).

(9)

Increment the address.

(10) Repeat (4) through (9) until the final address.

Timing for steps (2) through (8) above is shown in Figure 4-1.

Figure 4-1. PROM Write/Verify Timing

Write

A0-A14

V PP

CE(Input)

D0-D7

+6 V

OE(Input)

V DD

+12.5 V

V DD

Repeated X Times

Data Input

Address Input

Verify

3Xms

Hi-Z

Data

Output

Hi-Z

Data Input

Additional

Write

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