STUD35L01 datasheet(3/8 Pages) SAMHOP

부품명	STUD35L01

상세설명	Super high dense cell design for low RDS(ON).

PDF	8 Pages

Scroll/Zoom	100%

제조업체	SAMHOP [SamHop Microelectronics Corp.]

홈페이지	http://www.samhop.com.tw

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3 / 8 page

STU/D35L01

Ver 2.1

www.samhop.com.tw

Oct,29,2010

Tj( °

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C)

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C)

Figure 6. Breakdown Voltage Variation

with Temperature

0.5

1.0

1.5

2.0

2.5

3.0

VGS=5V

VGS=10V

VGS=6V

VGS=7V

1.4

8.4

7.0

5.6

4.2

2.8

Tj=125 C

-55 C

25 C

V GS =10V

3.0

2.6

2.2

1.8

1.4

1.0

100

125

150

V GS =10V

ID=15A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=250uA

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