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SBB5000 데이터시트(PDF) 2 Page - RF Micro Devices

부품명 SBB5000
상세설명  0.05GHz to 6GHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
PDF  6 Pages
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제조업체  RFMD [RF Micro Devices]
홈페이지  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SBB5000 데이터시트(HTML) 2 Page - RF Micro Devices

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DS111219
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SBB5000
Typical Performance (GSG Probe Data with Bias Tees) VD=5V, ID=75mA, T=25°C, Z=50
Absolute Maximum Ratings
Parameter
Rating
Unit
Total Current (ID)100
mA
Device Voltage (VD)5.5
V
Power Dissipation
0.55
W
Operating Lead Temperature (TL)
-40 to +85
°C
RF Input Power
+24
dBm
Storage Temperature Range
-55 to +150
°C
Operating Junction Temperature (TJ)+150
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Parameter
Units
500MHz
1000MHz 1500MHz 2000MHz 3000MHz 4000MHz
Small Signal Gain
dB
20.5
20.5
20.5
20.5
20.5
20.0
Output 3rd Order Intercept Point
(see note 1)
dBm
37.0
36.0
35.0
35.0
33.0
30.0
Output Power at 1dB Compression
dBm
21.0
20.5
20.5
20.5
19.5
17.0
Input Return Loss
dB
27.0
21.0
17.0
15.0
11.0
9.5
Output Return Loss
dB
22.0
18.0
14.6
12.0
9.0
7.2
Reverse Isolation
dB
22.1
22.5
22.4
22.9
23.0
23.0
Noise Figure
dB
3.8
4.0
3.9
3.9
4.0
3.8
Note 1: 0dBm/tone, 1MHz spacing
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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