2004 Dec 14

3

NXP Semiconductors

Product data sheet

PNP high-voltage transistors

BF621; BF623

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1.

Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.

2.

3.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF621

−

−300

V

BF623

−

−250

V

collector-emitter voltage

open base

BF621

−

−300

V

BF623

−

−250

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−50

mA

peak collector current

−

−100

mA

peak base current

−

−50

mA

total power dissipation

note 1

−

0.5

W

note 2

−

0.8

W

note 3

−

1.1

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ambient temperature

−65

+150

°C