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MS85N06 데이터시트(PDF) 1 Page - Bruckewell Technology LTD |
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MS85N06 데이터시트(HTML) 1 Page - Bruckewell Technology LTD |
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1 / 3 page ![]() Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES ■ RDS(on) (Max 0.013 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 60 V Drain Current -Continuous (TC=25℃) 85 A ID Drain Current -Continuous (TC=100℃) 60 A IDM Drain Current -Pulsed 340 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 929 mJ EAR Repetitive Avalanche Energy 17.6 mJ dv/dt Peak Diode Recovery dv/dt 7.0 V/ns Power Dissipation (TC=25℃) 176 W PD - Derate above 25℃ 1.17 W/℃ TJ,TSTG Operating and Storage Temperature Range –55 to + 175 ℃ TL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 ℃ • Drain current limited by maximum junction temperature |
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