| 전자부품 데이터시트 검색엔진 |
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MS85N06 데이터시트(PDF) 3 Page - Bruckewell Technology LTD |
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MS85N06 데이터시트(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 3 page ![]() Preliminary Data Sheet Bruckewell Technology Corp., Ltd. Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current –– –– 85 ISM Pulsed Source-Drain Diode Forward Current –– –– 340 A VSD Source-Drain Diode Forward Voltage IS=85A, VGS=0V –– –– 1.5 V trr Reverse Recovery Time –– 70 –– ns Qrr Reverse Recovery Charge IS=85 A , VGS= 0V diF/dt=100A/µs –– 130 –– µC Notes; 1. Repeativity rating : pulse width limited by junction temperature 2. L = 150uH, IAS =85A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 85A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. |
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