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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AUIRF1405 데이터시트(PDF) 2 Page - List of Unclassifed Manufacturers |
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AUIRF1405 데이터시트(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 12 page  AUIRF1405 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25°C, L = 0.11mH RG = 25, IAS = 101A. (See Figure 12). ISD 101A, di/dt 210A/μs, VDD V(BR)DSS, TJ 175°C Pulse width 400μs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. R is measured at TJ of approximately 90°C. S D G S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 4.6 5.3 m VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 69 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 170 260 Qgs Gate-to-Source Charge ––– 44 66 nC Qgd Gate-to-Drain ("Miller") Charge ––– 62 93 td(on) Turn-On Delay Time ––– 13 ––– tr Rise Time ––– 190 ––– td(off) Turn-Off Delay Time ––– 130 ––– ns tf Fall Time ––– 110 ––– LD Internal Drain Inductance Between lead, nH 6mm (0.25in.) LS Internal Source Inductance from package and center of die contact Ciss Input Capacitance ––– 5480 ––– Coss Output Capacitance ––– 1210 ––– Crss Reverse Transfer Capacitance ––– 280 ––– pF Coss Output Capacitance ––– 5210 ––– Coss Output Capacitance ––– 900 ––– Coss eff. Effective Output Capacitance g ––– 1500 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 88 130 ns Qrr Reverse Recovery Charge ––– 250 380 nC ton Forward Turn-On Time VDS = VGS, ID = 250μA VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 10V f VDD = 38V ID = 101A RG = 1.1 VGS = -20V Conditions Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 101A f p-n junction diode. TJ = 25°C, IS = 101A, VGS = 0V f TJ = 25°C, IF = 101A di/dt = 100A/μs f MOSFET symbol showing the integral reverse VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = 25V, ID = 101A ID = 101A VDS = 44V Conditions VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.5 VGS = 20V 4.5 ––– ––– ––– ––– 7.5 ––– ––– 169 h ––– ––– 680 |
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