EC2612

40GHz Super Low Noise pHEMT

Ref. : DSEC26120077 -17-Mar-00

8/8

Specifications subject to change without notice

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Chip Mechanical Data

dimensions in µm

Drain area= 60*60 µm

Gate area = 60*60 µm

Thickness = 100 µm

Recommended die attach

Stage temperature = 300°C

(minimize temp. and time whenever

possible)

Preforms = Au/Sn (80/20)

Atmosphere: dry nitrogen or forming

gas flow

Recommended bonding

∅ 18 µm very pure gold wire

(thermal compression)

The bonder should be properly

grounded

Source pads are directly connected to

back face metallization through the via

holes

Ordering Information

Chip form

:

EC2612-99F/00

Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors

S.A.S.

assumes no responsibility for the consequences of use of such information nor for any infringement of

patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use

as critical components in life support devices or systems without express written approval from United

Monolithic Semiconductors S.A.S.