EC2612

RoHS COMPLIANT

Ref. : DSEC26120077 -17-Mar-00

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

40GHz Super Low Noise pHEMT

Pseudomorphic High Electron Mobility Transistor

Description

The EC2612 is based on a 0.15µm gate

pseudomorphic

high

electron

mobility

transistor (0.15µm pHEMT) technology.

Gate width is 120µm and the 0.15µm

T-shaped aluminium gate features low

resistance and excellent reliability.

The

device

shows

a

very

high

transconductance which leads to very high

frequency and low noise performances.

It is available in chip form with sources via

holes connection.Only gate and drain wires

bounding are required.

Main Features

■ 0.8dB minimum noise figure @ 18GHz

■ 1.5dB minimum noise figure @ 40GHz

■ 12dB associated gain @ 18GHz

■ 9.5dB associated gain @ 40GHz

■ Chip size: 0.63 x 0.37 x 0.1 mm

D: Drain

G: Gate

S: Source

Main Characteristics

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Idss

Saturated drain current

10

40

60

mA

NFmin

Minimum noise figure (F=40GHz)

1.5

1.9

dB

Ga

Associated gain (F=40GHz)

8

9.5

dB

ESD Protections: Electrostatic discharge sensitive device observe handling precautions!