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2SD879G-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 2SD879G-AB3-R
상세설명  1.5V, 3V STROBE APPLICATIONS
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD879G-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  2SD879G-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SD879G-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SD879G-AB3-R Datasheet HTML 3Page - Unisonic Technologies  
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2SD879
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R208-010.C
ABSOLUTE MAXIMUM RATING ( T
A=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEX
20
V
Collector-Emitter Voltage
VCEO
10
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation
PD
1
W
Collector Current (DC)
IC
3
A
Collector Current (PULSE)
ICP
5
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Pulse Condition -> 100 ms single pulse
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Voltage
VCBO
IC=10uA, IE=0
30
V
Collector-Emitter Voltage
VCEX
IC=1mA, VBE=3V
20
V
Collector-Emitter Voltage
VCEO
IC=1mA, RBE=
10
V
Emitter-Base Voltage
VEBO
IE=10uA, IC=0
6
V
Base-Emitter Voltage
VBE
VCE=-1V,IC=-2A
0.83
1.5
V
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
1
A
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
1
A
DC Current Gain
hFE
VCE=2V, IC=3A (pulse)
140
210
400
Collector-Emitter Saturation Voltage
VCE(SAT) IC=3A, IB=60mA (pulse)
0.3
0.4
V
Current Gain Bandwidth Product
fT
VCE=10V, IC=50mA
200
MHz
Output Capacitance
COB
VCB=10V, f=1MHz
30
pF
Pulse: 1mS



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