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2SD879G-AB3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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2SD879G-AB3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 3 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R208-010.C 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. * The charge time is approximately 1 second faster than that of germanium transistors. * Less power dissipation because of lWO Collector-to-Emitter Voltage VCE(SAT), permitting more flashes of light to be emitted. * Large current capacity and highly resistant to break-down. * Excellent linearity of hFE in the region from low current to high current. ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 - 2SD879G-AB3-R SOT-89 B C E Tape Reel 2SD879L-T92-B 2SD879G-T92-B TO-92 E C B Tape Box 2SD879L-T92-K 2SD879G-T92-K TO-92 E C B Bulk Note: Pin Assignment: E: Emitter C: Collector B: Base MARKING SOT-89 TO-92 |
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