PIC16LC620-04SLASHSS datasheet(79/108 Pages) MICROCHIP

79 / 108 page

Preliminary

DS30235G-page 79

PIC16C62X

12.0

89ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings †

Ambient Temperature under bias .............................................................................................................. -40

° to +125°C

Storage Temperature................................................................................................................................. -65

° to +150°C

Voltage on any pin with respect to VSS (except VDD and MCLR)....................................................... -0.6V to VDD +0.6V

Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.5V

Voltage on MCLR with respect to VSS (Note 2)..................................................................................................0 to +14V

Total power Dissipation (Note 1) ...............................................................................................................................1.0W

Maximum Current out of VSS pin...........................................................................................................................300 mA

Maximum Current into VDD pin .............................................................................................................................250 mA

Input Clamp Current, IIK (VI <0 or VI> VDD)

......................................................................................................................±20 mA

Output Clamp Current, IOK (VO <0 or VO>VDD)

...............................................................................................................±20 mA

Maximum Output Current sunk by any I/O pin ........................................................................................................25 mA

Maximum Output Current sourced by any I/O pin ...................................................................................................25 mA

Maximum Current sunk by PORTA and PORTB ...................................................................................................200 mA

Maximum Current sourced by PORTA and PORTB ..............................................................................................200 mA

Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

† NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above

those indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

Note:

Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.

Thus, a series resistor of 50-100

Ω should be used when applying a "low" level to the MCLR pin rather

than pulling this pin directly to VSS.

Note:

Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.

Thus, a series resistor of 50-100

Ω should be used when applying a "low" level to the MCLR pin rather

than pulling this pin directly to VSS.

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