4 Meg x 4 EDO DRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

D47.pm5 – Rev. 3/97

©1997, Micron Technology, Inc.

8

4 MEG x 4

EDO DRAM

TECHNOLOGY, INC.

AC ELECTRICAL CHARACTERISTICS

AC CHARACTERISTICS

-5

-6

PARAMETER

SYMBOL

MIN

MAX

MIN

MAX

UNITS

NOTES

Access time from column address

25

30

ns

Column address setup to CAS# precharge

12

15

ns

Column address hold time (referenced to RAS#)

38

45

ns

Column address setup time

0

0

ns

Row address setup time

0

0

ns

Column address to WE# delay time

42

49

ns

13

Access time from CAS#

13

15

ns

14

Column address hold time

8

10

ns

CAS# pulse width

8

10,000

10

10,000

ns

CAS# LOW to “don’t care” during Self Refresh

15

15

ns

CAS# hold time (CBR Refresh)

8

10

ns

7

CAS# to output in Low-Z

0

0

ns

Data output hold after next CAS# LOW

3

3

ns

CAS# precharge time

8

10

ns

15

Access time from CAS# precharge

28

35

ns

CAS# to RAS# precharge time

5

5

ns

CAS# hold time

38

45

ns

CAS# setup time (CBR Refresh)

5

5

ns

CAS# to WE# delay time

28

35

ns

13

Write command to CAS# lead time

8

10

ns

Data-in hold time

8

10

ns

16

Data-in setup time

0

0

ns

16

Output disable

0

12

0

15

ns

Output Enable

12

15

ns

17

OE# hold time from WE# during

8

10

ns

18

READ-MODIFY-WRITE cycle

OE# HIGH hold from CAS# HIGH

5

10

ns

18

OE# HIGH pulse width

5

5

ns

OE# LOW to CAS# HIGH setup time

4

5

ns

Output buffer turn-off delay

0

12

0

15

ns

20

CAPACITANCE

PARAMETER

SYMBOL

MAX

UNITS

NOTES

Input Capacitance: Address pins

5pF

8

Input Capacitance: RAS#, CAS#, WE#, OE#

7pF

8

Input/Output Capacitance: DQ

7pF

8