LX5510 datasheet(3/7 Pages) MICROSEMI

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LX5510

PRELIMINARY DATA SHEET

C O

O N

N F

F II D

D E

E N

N T

T II A

A L

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

 2003

Rev. 0.3g, 2003-05-08

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

I N T E GR A T ED

PRODUCT S

ELECTRICAL CHA RACTERISTICS

Unless otherwise specified, the following specifications apply over the operating ambient temperature 0

°C

≤ T

A ≤ 70°C except where

otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C

LX5510

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Frequency Range

2.4

2.5

GHz

Power Gain at Pout = 19dBm

EVM at Pout = 19dBm

64QAM / 54Mbps

3.0

Total Current at Pout = 19dBm

Ictotal

120

Quiescent Current

Icq

Bias Control Reference Current

Iref

For Icq = 65mA

1.2

Small-Signal Gain

S21

Gain Flatness

∆S21

Over 100MHz

±0.5

Gain Variation Over

Temperature

∆S21

-40°C to +85°C

TBD

Input Return Loss

S11

Output Return Loss

S22

Reverse Isolation

S12

-40

Second Harmonic

Pout = 19dBm

-60

dBc

Third Harmonic

Pout = 19dbm

-50

dBc

Noise Figure

TBD

Ramp-On Time

tON

10 ~ 90%

100

Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink.

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