LX5510

C

L

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 1

Copyright

 2003

Rev. 0.3g, 2003-05-08

InGaP HBT 2.4 – 2.5 GHz Power Amplifier

I N T E GR A T ED

PRODUCT S

DESCRIPTION

The LX5510 is a power amplifier

optimized for WLAN applications in

the 2.4-2.5GHz frequency range. The

PA is implemented as a two-stage

monolithic

microwave

integrated

circuit (MMIC) with active bias and

input/output pre-matching.

The device is manufactured with an

InGaP/GaAs Heterojunction Bipolar

Transistor

(HBT)

IC

process

(MOCVD). With single low voltage

supply of 3.3V 20dB power gain

between

2.4-2.5GHz,

at

a

low

quiescent current of 65mA.

For +19dBm OFDM output power

(64QAM, 54Mbps), the PA provides a

low EVM (Error-Vector Magnitude) of

3.0%, and consumes 120mA total DC

current with the nominal 3.3V bias.

With increased bias of 4.5V EVM is ~

5% at 23dBm.

The LX5510 is available in a 16-pin

3mmx3mm micro-lead package (MLP).

The compact footprint, low profile, and

excellent thermal capability of the MLP

package makes the LX5510 an ideal

solution

for

medium-gain

power

amplifier

requirements

for

IEEE

802.11b/g applications

KEY FEATUR ES

Advanced InGaP HBT

2.4 – 2.5GHz Operation

Single-Polarity 3.3V Supply

Low Quiescent Current Icq

~65mA

Power Gain ~20dB @ 2.45GHz

and Pout = 19dBm

Total Current 120mA for Pout =

19dBm @ 2.45GHz OFDM

EVM ~ 3.0% for 64QAM /

54Mbps and Pout = 19dBm

Small Footprint (3x3mm

Low Profile (0.9mm)

APPLI C ATION S

IEEE 802.11b/g

PRODUCT H I GHLIGHT

PACKAGE ORDER

IN FO

LQ

Plastic MLPQ

16 pin

LX5510-LQ

Note: Available in Tape & Reel.

Append the letter “T” to the part number.

(i.e. LX5510-LQT)