OPA659 datasheet(4/35 Pages) TI1

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OPA659

SBOS342C – DECEMBER 2008 – REVISED NOVEMBER 2015

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7.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

Charged-device model (CDM), per JEDEC specification JESD22-

V(ESD)

Electrostatic discharge

±1000

C101(2)

Machine model (MM)

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Total supply voltage

Ambient temperature

–40

°C

7.4 Thermal Information

OPA659

THERMAL METRIC(1)

DRB (VSON)

DRV (SOT23)

UNIT

8 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

56.3

209

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

63.7

124

°C/W

RθJB

Junction-to-board thermal resistance

31.9

38.1

°C/W

ψJT

Junction-to-top characterization parameter

3.2

°C/W

ψJB

Junction-to-board characterization parameter

32.1

37.2

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

15.3

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.5 Electrical Characteristics

At RF = 0 Ω, G = 1 V/V, and RL = 100 Ω, TA = 25°C, VS = ±6 V unless otherwise noted.

TEST

PARAMETER

TEST CONDITIONS

LEVEL(1

MIN

TYP

MAX

UNIT

)

AC PERFORMANCE

VO = 200 mVPP, G = 1 V/V

650

MHz

VO = 200 mVPP, G = 2 V/V

335

MHz

Small-Signal Bandwidth

VO = 200 mVPP, G = 5 V/V

MHz

VO = 200 mVPP, G = 10 V/V

MHz

Gain Bandwidth Product

G > 10 V/V

350

MHz

Bandwidth for 0.1dB Flatness

G = 2 V/V, VO = 2VPP

MHz

Large-Signal Bandwidth

VO = 2 VPP, G = 1 V/V

575

MHz

Slew Rate

VO = 4-V Step, G = 1 V/V

2550

μs

Rise and Fall Time

VO = 4-V Step, G = 1 V/V

1.3

Settling Time to 1%

VO = 4-V Step, G = 1 V/V

Pulse Response Overshoot

VO = 4-V Step, G = 1 V/V

12%

Harmonic Distortion, 2nd harmonic

VO = 2 VPP, G = 1 V/V, f = 10 MHz

–79

dBc

Harmonic Distortion, 3rd harmonic

VO = 2 VPP, G = 1 V/V, f = 10 MHz

–100

dBc

Intermodulation Distortion, 2nd

VO= 2 VPP Envelope (each tone 1 VPP),

–72

dBc

intermodulation

G = 2 V/V, f1 = 10 MHz, f2 = 11 MHz

Intermodulation Distortion, 3rd

VO= 2 VPP Envelope (each tone 1 VPP),

–96

dBc

intermodulation

G = 2 V/V, f1 = 10 MHz, f2 = 11 MHz

(1)

Test levels: (A) 100% tested at 25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization

and simulation. (C) Typical value only for information.

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