ATmega16 datasheet(263/315 Pages) ATMEL

263 / 315 page

263

ATmega16(L)

2466E–AVR–10/02

Programming the EEPROM

The EEPROM is organized in pages, see Table 111 on page 259. When programming

the EEPROM, the program data is latched into a page buffer. This allows one page of

data to be programmed simultaneously. The programming algorithm for the EEPROM

data memory is as follows (refer to “Programming the Flash” on page 260 for details on

Command, Address and Data loading):

A: Load Command “0001 0001”.

G: Load Address High Byte ($00 - $FF)

B: Load Address Low Byte ($00 - $FF)

C: Load Data ($00 - $FF)

E: Latch data (give PAGEL a positive pulse)

K: Repeat 3 through 5 until the entire buffer is filled

L: Program EEPROM page

Set BS1 to “0”.

Give WR a negative pulse. This starts programming of the EEPROM page.

RDY/BSY goes low.

Wait until to RDY/BSY goes high before programming the next page. (See Fig-

ure 130 for signal waveforms)

Figure 130. Programming the EEPROM Waveforms

Reading the Flash

The algorithm for reading the Flash memory is as follows (refer to “Programming the

Flash” on page 260 for details on Command and Address loading):

A: Load Command “0000 0010”.

G: Load Address High Byte ($00 - $FF)

B: Load Address Low Byte ($00 - $FF)

Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at

DATA.

RDY/BSY

RESET +12V

PAGEL

BS2

0x11

ADDR. HIGH

DATA

ADDR. LOW

DATA

ADDR. LOW

DATA

XA1

XA0

BS1

XTAL1

ATMEGA16 데이터시트(PDF) 263 Page - ATMEL Corporation

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