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L9959 데이터시트(PDF) 13 Page - STMicroelectronics

부품명 L9959
상세설명  Single and dual PMOS high-side H-bridge
PDF  49 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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L9959
Electrical specifications
48
3
Electrical specifications
3.1
Absolute maximum ratings
Warning:
Stressing the device above the rating listed in the "Absolute
maximum ratings" table may cause permanent damage to the
device. These are stress ratings only and operation of the
device at these or any other conditions above those
indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to
the STMicroelectronics SURE program and other relevant
quality document.
3.2
ESD protection
Table 5. Absolute maximum ratings
Symbol
Parameter / Test condition
Value [DC Voltage]
Unit
VVS
DC supply voltage
The device is able to sustain load dump as
specified in the ISO16750 documentation
-1.0 to +40
V
VVDD
Stabilized supply voltage, logic supply
-0.3 to 18
V
CF (1)
1. It is withstood at VS = 18 V
Current feedback output
-0.3 to 18
V
VSI, VSCK, VSS, VSO,
VDIR, VPWM, VDIS
Logic input / output voltage range
-0.3 to 18
V
VOUTn
Output voltage (n = 1,2 or 11,12,21,22);
VOUTn < VS + 1 V
-1.0 to 40
V
Dynamic pulse / t < 500ms; VOUTn < VS + 2 V
-2.0 to 40
V
Tj
Operating junction temperature
-40 to 150
°C
Dynamic junction temperature (1000hrs)
150 to 175
°C
Tstg
Storage temperature
-55 to 150
°C
Table 6. ESD protection
Parameter
Value
Unit
All pins versus ground group (AGND, PGND1, PGND2, GND_ABE1, GND_ABE2)
±2(1)
1. HBM according to MIL 883C, Method 3015.7 or EIA/JESD22-A114-A.
kV
VS pin, Power Output Pins: OUT1, OUT2 or OUT11, OUT12, OUT21, OUT22
versus ground group (AGND, PGND1, PGND2, GND_ABE1, GND_ABE2)
±4(2)
2. HBM with all unzipped pins grounded.
kV



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