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STBB3J 데이터시트(PDF) 9 Page - STMicroelectronics |
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STBB3J 데이터시트(HTML) 9 Page - STMicroelectronics |
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9 / 25 page ![]() DocID025263 Rev 5 9/25 STBB3J Electrical characteristics VIH High-level input voltage (EN, MODE pins) 1.2 V ILK-I Input leakage current (EN, MODE pins) VEN = VMODE = 5.5 V 0.01 1 µA TON Turn on-time(2) VEN from low to high, IOUT = 10 mA 260 300 µs Power switches RDS(on) P-channel on-resistance 100 300 m Ω N-channel on-resistance 100 300 m Ω ILKG-P P-channel leakage current VIN = VOUT = 5.5 V; VEN = 0 1 µA ILKG-N N-channel leakage current VSW1 = VSW2 = 5.5 V; VEN = 0 1 µA 1. Not tested in production. This value is guaranteed by correlation with RDS(on), peak current limit and operating input voltage. 2. Not tested in production. Table 6. Electrical characteristics (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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