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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STBP112 데이터시트(PDF) 6 Page - STMicroelectronics |
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STBP112 데이터시트(HTML) 6 Page - STMicroelectronics |
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6 / 38 page  Description STBP112 6/38 Doc ID 023357 Rev 3 1 Description The STBP112 device provides overvoltage protection for input voltage up to +28 V. Its low RDS(on) N-channel MOSFET switch protects the systems connected to the OUT pin against failures of the DC power supplies in accordance with the China MII Communications Standard YD/T 1591-2006. In the event of an input overvoltage condition, the device immediately disconnects the DC power supply by turning off an internal low RDS(on) N-channel MOSFET to prevent damage to protected components. In addition, the device also monitors its own junction temperature and switches off the internal MOSFET if the junction temperature exceeds the specified limit. The device can be controlled by the microcontroller and can also provide status information about fault conditions. The STBP112 is offered in a small, RoHS-compliant 8-lead TDFN (2 mm x 2 mm) package. Figure 1. Logic diagram Figure 2. Pinout 1. Exposed thermal pad may be tied to GND. |
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