STBP112 datasheet(27/38 Pages) STMICROELECTRONICS

27 / 38 page

STBP112

DC and AC parameters

Doc ID 023357 Rev 3

27/38

VIH(EN)

EN high level input voltage

1.2

RPD(EN)

EN internal pull-down

resistor(3)

VIN > 2.5 V, V(EN) = 5 V

100

250

400

Timing parameters

ton

Startup delay(4)

Time measured from VIN > VUVLO to

VOUT = 0.3 V (no load on the output).

8ms

toff

(5)

Output turn-off time

Time measured from VIN > VOVLO to

VOUT ≤ 0.3 V. VIN increasing from

5.0 V to 8.0 V at 3.0 V/µs, RLOAD = 5 Ω,

CLOAD = 0.

µs

tdis

(5)

Disable time

Time measured from V(EN) ≥ 1.2 V to

VOUT < 0.3 V, RLOAD = 5 Ω, CLOAD = 0.

trec

Recovery delay from UVLO,

OVLO, or thermal shutdown(4)

Time measured to VOUT = 0.3 V

(no load on the output)

8ms

Thermal shutdown

Toff

Thermal shutdown threshold

temperature

140

150

°C

THYS(off)

Thermal shutdown hysteresis

°C

Test conditions described in Table 4 (except where noted).

Hysteresis of 60 mV typ. available upon request.

Version without pull-down resistor or with permanently connected pull-down resistor available upon request.

Delays of 16, 32, and 64 ms available upon request.

Guaranteed by design. Not tested in production.

Table 5.

DC and AC characteristics (continued)

Symbol

Description

Test condition(1)

Min.

Typ.

Max.

Unit

STBP112 데이터시트(PDF) 27 Page - STMicroelectronics

STBP112 데이터시트(HTML) 27 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

데이터시트 다운로드

링크 URL