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STM32F401CB 데이터시트(PDF) 63 Page - STMicroelectronics

부품명 STM32F401CB
상세설명  Up to 81 I/O ports with interrupt capability
PDF  134 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F401CB 데이터시트(HTML) 63 Page - STMicroelectronics

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STM32F401xB STM32F401xC
Electrical characteristics
113
6.3.6
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 19: Current consumption
measurement scheme.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.
VPDRhyst(2) PDR hysteresis
-
40
-
mV
VBOR1
Brownout level 1
threshold
Falling edge
2.13
2.19
2.24
V
Rising edge
2.23
2.29
2.33
VBOR2
Brownout level 2
threshold
Falling edge
2.44
2.50
2.56
Rising edge
2.53
2.59
2.63
VBOR3
Brownout level 3
threshold
Falling edge
2.75
2.83
2.88
Rising edge
2.85
2.92
2.97
VBORhyst(2) BOR hysteresis
-
100
-
mV
TRSTTEMPO
(2)(3)
POR reset timing
0.5
1.5
3.0
ms
IRUSH(2)
InRush current on
voltage regulator power-
on (POR or wakeup from
Standby)
-
160
200
mA
ERUSH(2)
InRush energy on
voltage regulator power-
on (POR or wakeup from
Standby)
VDD = 1.7 V, TA = 105 °C,
IRUSH = 171 mA for 31 µs
--
5.4
µC
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design.
3. The reset timing is measured from the power-on (POR reset or wakeup from VBAT) to the instant when first
instruction is fetched by the user application code.
Table 19. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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