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STW35N60DM2 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STW35N60DM2
상세설명  Extremely high dv/dt ruggedness
PDF  12 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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September 2015
DocID028306 Rev 1
1/12
This is information on a product in full production.
www.st.com
STW35N60DM2
N-channel 600 V, 0.094
Ω typ., 28 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STW35N60DM2
600 V
0.110
Ω
28 A
210 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STW35N60DM2
35N60DM2
TO-247
Tube
TO-247
1
2
3


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