STW35N60DM2 datasheet(3/12 Pages) STMICROELECTRONICS

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STW35N60DM2

Electrical ratings

DocID028306 Rev 1

3/12

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM

(1)

Drain current (pulsed)

112

PTOT

Total dissipation at Tcase = 25 °C

210

dv/dt

(2)

Peak diode recovery voltage slope

V/ns

dv/dt

(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

ISD ≤ 28 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V

(3)

VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.6

°C/W

Rthj-amb

Thermal resistance junction-amb

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

EAS

(1)

Single pulse avalanche energy

650

Notes:

(1)

starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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