STM32F479AI datasheet(177/208 Pages) STMICROELECTRONICS

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DocID028010 Rev 2

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STM32F479xx

Electrical characteristics

187

Figure 68. NAND controller waveforms for common memory write access

SDRAM waveforms and timings

•

CL = 30 pF on data and address lines.

•

CL = 10 pF on FMC_SDCLK unless otherwise specified.

Table 101. Switching characteristics for NAND Flash read cycles

Symbol

Parameter

Min

Max

Unit

tw(N0E)

FMC_NOE low width

4THCLK − 0.5 4THCLK+0.5

tsu(D-NOE)

FMC_D[15-0] valid data before FMC_NOE high

th(NOE-D)

FMC_D[15-0] valid data after FMC_NOE high

td(ALE-NOE) FMC_ALE valid before FMC_NOE low

3THCLK − 0.5

th(NOE-ALE) FMC_NWE high to FMC_ALE invalid

3THCLK − 2-

Table 102. Switching characteristics for NAND Flash write cycles

Symbol

Parameter

Min

Max

Unit

tw(NWE)

FMC_NWE low width

4THCLK

4THCLK+1

tv(NWE-D)

FMC_NWE low to FMC_D[15-0] valid

th(NWE-D)

FMC_NWE high to FMC_D[15-0] invalid

3THCLK − 1-

td(D-NWE)

FMC_D[15-0] valid before FMC_NWE high

5THCLK − 3-

td(ALE-NWE)

FMC_ALE valid before FMC_NWE low

3THCLK−0.5

th(NWE-ALE)

FMC_NWE high to FMC_ALE invalid

3THCLK − 1-

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