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STM32F446VC 데이터시트(PDF) 114 Page - STMicroelectronics

부품명 STM32F446VC
상세설명  8- to 14-bit parallel camera interface up to 54 Mbytes
PDF  201 Pages
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STM32F446VC 데이터시트(HTML) 114 Page - STMicroelectronics

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Electrical characteristics
STM32F446xC/E
114/201
DocID027107 Rev 5
6.3.14
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 51. They are based on the EMS levels and classes
defined in application note AN1709.
VPP
VPP voltage range
-
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
-10
-
-
mA
tVPP(3)
Cumulative time during
which VPP is applied
-
-
-
1
hour
1. Guaranteed by design.
2. The maximum programming time is measured after 100K erase operations.
3. VPP should only be connected during programming/erasing.
Table 50. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
--
Min(1)
1. Guaranteed based on test during characterization.
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
Kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
Table 49. Flash memory programming with VPP (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit



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