BC856AW-G datasheet(1/6 Pages) COMCHIP

부품명	BC856AW-G

상세설명	Small Signal Transistor

PDF	6 Pages

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제조업체	COMCHIP [Comchip Technology]

홈페이지	http://www.comchiptech.com

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Small Signal Transistor

RoHS Device

Features

-Power dissipation

PCM: 0.15W (@TA=25°C)

-Collector current

ICM: -0.1A

-Collector-base voltage

VCBO: BC856W= -80V

BC857W= -50V

BC858W= -30V

-Operating and storage junction temperature

range: TJ, TSTG= -65 to +150°C

Mechanical data

-Case: SOT-323, molded plastic.

-Terminals: solderable per MIL-STD-750,

method 2026.

Circuit diagram

BC856AW-G Thru. BC858CW-G (PNP)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Storage Temperature Range

Units

Symbol

Parameter

Value

3

1

2

VCBO

VCEO

VEBO

IC

PC

-80

-50

-30

-65

-45

-30

-5

150

V

A

mW

Dimensions in inches and (millimeter)

SOT-323

1

2

3

0.087 (2.20)

0.079 (2.00)

0.096 (2.45)

0.085 (2.15)

0.016 (0.40)

0.008 (0.20)

0.053(1.35)

0.045(1.15)

0.039 (1.00)

0.035 (0.90)

0.010 (0.26)

0.004 (0.10) max

0.006 (0.15)

0.003 (0.08)

0.055 (1.40)

0.047 (1.20)

0.018 (0.46)

Junction Temperature

TJ

150

O C

Collector Power Dissipation

BC856W-G

BC858W-G

BC857W-G

BC856W-G

BC858W-G

BC857W-G

-0.1

-1.BASE

-2.EMITTER

-3.COLLECTOR

TSTG

-65 to +150

O C

-Ideally suited for automatic insertion

-For Switching and AF Amplifier Applications

Maximum Ratings (at Ta=25°C unless otherwise noted)

Comchip Technology CO., LTD.

Page 1

REV:B

QW-BTR36

Company reserves the right to improve product design , functions and reliability without notice.

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