BC856AW-G datasheet(2/6 Pages) COMCHIP

2 / 6 page

Electrical Characteristics (TA= 25 °C unless otherwise specified)

Comchip Technology CO., LTD.

Page 2

REV:B

Small Signal Transistor

QW-BTR36

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Break

Voltage

down

Collector Cut-off Current

Collector-Emitter Saturation Voltage

Units

Symbol

Parameter

MIN

VCBO

VCEO

VEBO

ICBO

VCE(sat)

Cob

-80

-50

-30

-65

-45

-30

-5

-15

4.5

Test Conditions

IC = -10μA , IE=0

IC = -10mA , IB=0

IE = -1μA , IC=0

VCB= -30V , IE=0

MAX

DC Current Gain

hFE

BC856AW,857AW,858AW

BC856BW,857BW,858BW

BC857CW,858CW

VCE = -5V , IC= -2mA

250

475

800

IC =-100mA , IB=-5mA

-0.65

Base-Emitter Saturation Voltage

VBE(sat)

IC =-100mA , IB=-5mA

Transition Frequency

MHZ

100

VCE=-5V , IC=-10mA

f=100MHZ

Collector Capacitance

VCB =-10V , f=1MHZ

BC856W-G

BC858W-G

BC857W-G

BC856W-G

BC858W-G

BC857W-G

-1.1

125

220

420

Company reserves the right to improve product design , functions and reliability without notice.

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