2SA652 datasheet(2/2 Pages) ISC

부품명	2SA652

상세설명	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)

PDF	2 Pages

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistor

2SA652

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -50mA ; IB= 0

-100

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-150

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-2.0

ICBO

Collector Cutoff Current

VCB= -150V; IE= 0

-10

μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

μ A

hFE

DC Current Gain

IC= -0.2A; VCE= -5V

200

COB

Collector Output Capacitance

IE=0; VCB= -5V; f= 1MHz

100

Current-Gain

—Bandwidth Product

IC= -0.1A; VCE= -10V

MHz

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