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2SA652 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 2SA652
상세설명  Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA652 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SA652
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·Contunuous Collector Current IC= -1A
·Power DissipationPC= 15W @TC= 25℃
APPLICATIONS
·Designed for low frequency power amplifier color TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.0
A
PC
Collector Power Dissipation@TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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