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2N6835 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 2N6835
상세설명  High Switching Speed
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6835 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
2N6835
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=100mA ; IB=0
450
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.4A
1.2
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.66A
IC= 5A; IB= 0.66A,TC=100℃
2.5
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.66A
IC= 5A; IB= 0.66A,TC=100℃
1.5
1.5
V
ICEV
Collector Cutoff Current
VCEV= 850V;VBE(off)= 1.5V
VCEV= 850V;VBE(off)= 1.5V;TC=100℃
0.25
1.5
mA
ICER
Collector Cutoff Current
VCE= 850V; RBE= 50Ω,TC= 100℃
2.5
mA
IEBO
Emitter Cutoff Current
VEB= 6.0V; IC=0
1.0
mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 5V
7.5
30
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
4
fT
Current Gain-Bandwidth Product
IC= 0.25A ;VCE= 10V; ftest=10MHz
10
75
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0kHz
50
350
pF
Switching times;Resistive Load
td
Delay Time
IC= 5A , VCC= 250V;
IB1= 0.66A; IB2= -1.3A;
PW= 30μs; RB2= 4Ω
Duty Cycle≤2.0%
20
50
ns
tr
Rise Time
85
250
ns
ts
Storage Time
1000
2500
ns
tf
Fall Time
70
250
ns



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