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2N6835 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6835 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2N6835 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) · High Switching Speed APPLICATIONS · Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: · Switching regulators · Inverters · Motor controls · Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃ /W SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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