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AM29F002NB 데이터시트(PDF) 35 Page - Advanced Micro Devices |
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AM29F002NB 데이터시트(HTML) 35 Page - Advanced Micro Devices |
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35 / 40 page ![]() 34 Am29F002B/Am29F002NB November 28, 2000 ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25×C, 5.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5 for further information on command definitions. 6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time. RESET# not available on Am29F002NB. TSOP PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 1 8 s Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 7 s Byte Programming Time 7 300 µs Excludes system level overhead (Note 5) Chip Programming Time (Note 3) 1.8 5.4 s Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF |
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