ACE4940M datasheet(3/7 Pages) ACE

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ACE4940M

Dual N-Channel 40-V MOSFET

VER 1.2

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 32 V, VGS = 0 V

VDS = 32 V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

4.1

Drain-Source On-Resistance

RDS(ON)

VGS = 10 V, ID = 6.6A

mΩ

VGS = 4.5 V, ID =5.9 A

Forward Transconductance

gFS

VDS = 15 V, ID = 6.6 A

Diode Forward Voltage

VSD

IS = 1.5 A, VGS = 0 V

0.7

Dynamic

Total Gate Charge

VDS = 20 V, VGS = 4.5 V, ID =6.6 A

Gate-Source Charge

Qgs

5.7

Gate-Drain Charge

Qgd

9.2

Turn-On Delay Time

td(on)

VDS = 20 V, RL = 3 Ω, ID = 6.6 A,

VGEN = 10 V, RGEN = 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

1309

Output Capacitance

Coss

250

Reverse Transfer Capacitance

Crss

151

Note :

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

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