| 전자부품 데이터시트 검색엔진 |
|
ACE4940M 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
|
|
|||||||||||||||||||||||||||||
ACE4940M 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
|
1 / 7 page ![]() ACE4940M Dual N-Channel 40-V MOSFET VER 1.2 1 Description The ACE4940M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current a TA=25℃ ID 8.3 A TA=70℃ 6.8 Pulsed Drain Current b IDM 50 A Continuous Source Current (Diode Conduction) a IS 3 A Power Dissipation a TA=25℃ PD 2.1 W TA=70℃ 1.3 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Units Maximum Junction-to-Ambient a t <= 10 sec RθJA 62.5 °C/W Steady State 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature |
유사한 부품 번호 - ACE4940M |
|
유사한 설명 - ACE4940M |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |