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T430 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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T430 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Darlington Power Transistor T430 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.14A 1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 0.14A 2.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 100 μ A ICEO Collector Cutoff Current VCE= 400V; IB= 0 500 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE DC Current Gain IC= 4A; VCE= 4V 800 |
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