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T430 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 T430
상세설명  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

T430 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor
T430
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·
High DC Current Gain
: hFE= 800(Min.)@ IB= 4A
·
Low Collector Saturation Voltage
: VCE(sat)= 1.5V(Max.)@ IC= 3A
APPLICATIONS
·
Switching for dynamotor excitation
·
Automotive ignition
·
Switching regulator
·
Motor control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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