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DP8422V 데이터시트(PDF) 30 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 DP8422V
상세설명  microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers
PDF  60 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
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DP8422V 데이터시트(HTML) 30 Page - National Semiconductor (TI)

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60 Port A Wait State Support (Continued)
TLF11109 – 38
FIGURE 24b WAITIN Example (WAIT is Sampled at the End of ‘‘T2’’)
64 GUARANTEEING RAS LOW TIME
AND RAS PRECHARGE TIME
The DP8420V21V22V DP84T22 will guarantee RAS pre-
charge time between accesses between refreshes and be-
tween access and refreshes The programming bits R0 and
R1 are used to program combinations of RAS precharge
time and RAS low time referenced by positive edges of
CLK RAS low time is programmed for refreshes only Dur-
ing an access the system designer guarantees the time
RAS is asserted through the DP8420V21V22V DP84T22
wait logic Since inserting wait states into an access in-
creases the length of the CPU signals which are used to
create ADS or ALE and AREQ the time that RAS is assert-
ed can be guaranteed
The precharge time is also guaranteed by the DP8420V
21V22V DP84T22 Each RAS output has a separate posi-
tive edge of CLK counter AREQ is negated setup to a posi-
tive edge of CLK to terminate the access That positive
edge is 1T The next positive edge is 2T RAS will not be
asserted until the programmed number of positive edges of
CLK have passed as shown in
Figure 25 Once the pro-
grammed precharge time has been met RAS will be assert-
ed from the positive edge of CLK However since there is a
precharge counter per RAS an access using another RAS
will not be delayed Precharge time before a refresh is al-
ways referenced from the access RAS negating before
RAS0 for the refresh asserting After a refresh precharge
time is referenced from RAS3 negating for the refresh to
the access RAS asserting
TLF11109 – 39
FIGURE 25 Guaranteeing RAS Precharge (DTACK is Sampled at the ‘‘T2’’ Falling Clock Edge)
30



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