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SS2015 데이터시트(PDF) 4 Page - SEC Electronics Inc. |
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SS2015 데이터시트(HTML) 4 Page - SEC Electronics Inc. |
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4 / 6 page ![]() SS2015 CMOS High Sensitivity Micropower Hall Latch 4 V3.10 Nov 1, 2013 Magnetic Characteristics Operating Parameters: TA = 25°C, VDD =12V Parameter Symbol Min Type Max Units Operating Point BOP 5 70 Gs Release Point BRP -70 -5 Gs Hysteresis BHYST 80 Gs ESD Protection Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7 Parameter Symbol Limit Values Unit Notes Min Max ESD Voltage VESD ±4 kV Performance Characteristics Unique Features CMOS Hall IC Technology The chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. CMOS makes this advanced technique possible. The CMOS chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. The small chip size also contributes to lower physical stress and less power consumption. Installation Comments Consider temperature coefficients of Hall IC and magnetic, as well as air gap and life time variations. Observe temperature limits during wave soldering. Typical IR solder-reflow profile: – No Rapid Heating and Cooling. – Recommended Preheating for max. 2minutes at 150°C – Recommended Reflowing for max. 5seconds at 240°C |
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