| 전자부품 데이터시트 검색엔진 |
|
LL4448 데이터시트(PDF) 2 Page - Diode Semiconductor Korea |
|
|
|||||||||||||||||||||||||||||
LL4448 데이터시트(HTML) 2 Page - Diode Semiconductor Korea |
|
2 / 2 page ![]() mA IF F 2 3 T =100 C J O T =25 C J O 1 10 10 10 10 10 -2 -1 V 0 1 2V 200 100 0 0 300 400 500 600 700 800 900 1000 mW Ptot TA 25 100 175 200℃ 0.3 0.1 0.2 tp n=0 I 0.1 10 10 10 1 10 100 10 1 10S FRM V=tp/T T=1/tp tp T I FRM I -5 -3 -2 -1 FIG.3-ADMISSIBLE REPETITIVE PEAK FORWORD CURRENT VERSUS PULSE DURATION LL4448 FIG.1 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG.2-- FORWARD CHARACTERISTICS www.diode.kr Diode Semiconductor Korea |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |