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TMS28F008AST 데이터시트(PDF) 27 Page - Texas Instruments

부품명 TMS28F008AST
상세설명  AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
PDF  52 Pages
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

TMS28F008AST 데이터시트(HTML) 27 Page - Texas Instruments

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TMS28F008Axy,TMS28F800Axy
1048576 BY 8BIT/524288 BY 16BIT
AUTOSELECT BOOT BLOCK FLASH MEMORIES
SMJS851A − NOVEMBER 1997 − REVISED MARCH 1998
27
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251−1443
recommended operating conditions
MIN
NOM
MAX
UNIT
3 VCC
2.7
3
3.6
VCC
Supply voltage
During write/read/erase/erase suspend
3.3 VCC
3
3.3
3.6
V
VCC
Supply voltage
During write/read/erase/erase suspend
5 VCC
4.5
5
5.5
V
During read only (VPPL)
0
6.5
V
VPP
Supply voltage
During write/erase/erase suspend, VPP can have VCC
3 VPP
3.0
3.3
3.6
VPP
Supply voltage
During write/erase/erase suspend, VPP can have VCC
as MIN or NOM
5 VPP
4.5
5
5.5
V
as MIN or NOM
12 VPP
11.4
12
12.6
V
VIH
High-level dc input voltage
TTL
2
VCC + 0.5
V
VIH
High-level dc input voltage
CMOS
VCC − 0.2
VCC + 0.2
V
VIL
Low-level dc input voltage
TTL
− 0.5
0.8
V
VIL
Low-level dc input voltage
CMOS
VSS − 0.2
VSS + 0.2
V
VLKO
VCC lock-out voltage from write/erase (see Note 7)
1.2
V
VHH
RP unlock voltage
11.4
12
13
V
VPPLK VPP lock-out voltage from write/erase (see Note 7)
0
1.5
V
TA
Ambient temperature during read/erase/program:
L Suffix
0
70
°C
TA
Ambient temperature during read/erase/program:
E Suffix
−40
85
°C
NOTE 7: Typical values shown are at TA = 25°C.
word/byte typical write and block-erase performance (see Notes 7 and 8)
MIN
TYP
MAX
UNIT
Main-block erase time
2.4
s
Main-block byte-program time
1.7
s
Main-block word-program time
1.1
s
Parameter/ boot-block erase time
0.84
s
NOTES:
7. Typical values shown are at TA = 25°C.
8. Excludes system-level overhead (all times in seconds)



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