K4S561633C-R(B)L/N/P

Rev. 1.4 Dec. 2002

CMOS SDRAM

DC OPERATING CONDITIONS

Notes :

≤ 3ns.

≤ 3ns.

3. Any input 0V

Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.

4. Dout is disabled, 0V

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

2.7

3.0

3.6

V

2.7

3.0

3.6

V

Input logic high voltage

2.2

3.0

V

1

Input logic low voltage

-0.3

0

0.5

V

2

Output logic high voltage

2.4

-

-

V

Output logic low voltage

-

-

0.4

V

Input leakage current

-10

-

10

uA

3

Pin

Symbol

Min

Max

Unit

Note

Clock

2.0

4.0

pF

RAS, CAS, WE, CS, CKE, DQM

2.0

4.0

pF

Address

2.0

4.0

pF

3.5

6.0

pF

ABSOLUTE MAXIMUM RATINGS

Notes :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

-1.0 ~ 4.6

V

-1.0 ~ 4.6

V

Storage temperature

-55 ~ +150

°C

Power dissipation

1

W

Short circuit current

50

mA