| 전자부품 데이터시트 검색엔진 |
|
2N3767 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2N3767 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2N3767 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 2.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 10V 1.5 V ICEO Collector Cutoff Current VCE= 80V; IB= 0 0.7 mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 100V; IE= 0,TC=150℃ 0.1 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.75 mA hFE-1 DC Current Gain IC= 50mA ; VCE= 5V 30 hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 40 160 hFE-3 DC Current Gain IC= 1A; VCE= 10V 20 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f=10MHz 10 MHz |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |