ATF331M4 datasheet(5/17 Pages) HP

5 / 17 page

ATF-331M4 Typical Performance Curves

Notes:

1. Measurements made on fixed tuned

production test board that was tuned for

optimal gain match with reasonable noise

figure at 4V 60 mA bias. This circuit

represents a trade-off between an optimal

noise match, maximum gain match and a

realizable match based on production test

board requirements. Circuit losses have been

de-embedded from actual measurements.

2. Quiescent drain current, Idsq, is set with zero

RF drive applied. As P1dB is approached, the

drain current may increase or decrease

depending on frequency and dc bias point. At

lower values of Idsq the device is running

closer to class B as power output approaches

P1dB. This results in higher P1dB and higher

PAE (power added efficiency) when compared

to a device that is driven by a constant

current source as is typically done with active

biasing.

Figure 8. P1dB vs. Bias[1,2] 2 GHz.

Idsq (mA)

100

Figure 10. NF & Gain vs. Bias[1] at 2 GHz.

Id (mA)

100

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 6. OIP3, IIP3 & Bias[1] at 2 GHz.

Ids (mA)

100

Figure 7. OIP3, IIP3 & Bias[1] at 900 MHz.

Ids (mA)

100

Figure 9. P1dB vs. Bias[1] 900 MHz.

Idsq (mA)

100

Figure 11. NF & Gain vs. Bias[1] at 900 MHz.

Id (mA)

120

100

1.4

1.2

1.0

0.8

0.6

0.4

0.2

ATF331M4 데이터시트(PDF) 5 Page - Agilent(Hewlett-Packard)

ATF331M4 데이터시트(HTML) 5 Page - Agilent(Hewlett-Packard)

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

데이터시트 다운로드

링크 URL