NCP431A, SC431A, NCP431B, SC431B, NCP432B, SC432B Series

www.onsemi.com

2

Cathode

(K)

Reference

(R)

Anode

(A)

Figure 1. Symbol

Cathode

(K)

Reference

(R)

Anode

(A)

Figure 2. Representative Block diagram

This device contains 20 active transistors

Symbol

Rating

Value

Unit

Cathode to Anode Voltage

37

V

Cathode Current Range, Continuous

−100 to +150

mA

Reference Input Current Range, Continuous

−5 to +10

mA

Operating Junction Temperature

150

°C

Operating Ambient Temperature Range

−40 to +125

°C

Storage Temperature Range

−65 to +150

°C

Derate above 25

°C Ambient Temperature

D, LP Suffix Plastic Package

SN1 Suffix Plastic Package

0.70

0.52

W

Derate above 25

°C Case Temperature

D, LP Suffix Plastic Package

1.5

W

HBM

CDM

ESD Rating (Note 1)

Human Body Model per JEDEC JESD22−A114F

Charged Device Model per JEDEC JESD22−C101E

>2000

>1000

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. This device contains latch−up protection and exceeds

±100 mA per JEDEC standard JESD78.

RECOMMENDED OPERATING CONDITIONS

Symbol

Condition

Min

Max

Unit

Cathode to Anode Voltage

36

V

Cathode Current

0.04

100

mA

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

THERMAL CHARACTERISTICS

Symbol

Characteristic

LP Suffix Package

mm Cu)

D Suffix Package

mm Cu)

SN Suffix Package

mm Cu)

Unit

Thermal Resistance,

Junction−to−Ambient

176

210

255

°C/W

Thermal Resistance,

Junction−to−Lead (Lead 3)

75

68

80

°C/W